A Robust AlGaN/GaN HEMT Technology for RF Switching Applications

A Robust AlGaN/GaN HEMT Technology for RF Switching Applications

The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF sw...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hodge, M. D., Vetury, R., Shealy, J., Adams, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Gallium nitride
HEMTs
Radio frequency
Reliability
Stress
Temperature measurement
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Beschreibung
Zusammenfassung:The authors report results suggesting that GaN HEMTs developed for RF switching applications do not suffer from an inverse piezo effect related reliability failure mechanism. A critical voltage was not observed prior to breakdown voltage, suggesting a robust GaN HEMT technology well suited for RF switching applications.
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2011.6062456