Electro-opto-thermal modeling of threshold current dependence on temperature
A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et a...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 1997-04, Vol.3 (2), p.640-648 |
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| container_end_page | 648 |
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| container_issue | 2 |
| container_start_page | 640 |
| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Ellis, D.S. Xu, J.M. |
| description | A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et al. (1995). Aided with detailed knowledge so obtained of each contributor to the threshold current, attempts are made to gain insights into the well-known Pankove and other newly proposed empirical relations. The relative importance of the various mechanisms are evaluated, and self-heating is shown as an important factor determining the threshold current at high temperature. |
| doi_str_mv | 10.1109/2944.605716 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_605716</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>605716</ieee_id><sourcerecordid>10_1109_2944_605716</sourcerecordid><originalsourceid>FETCH-LOGICAL-c250t-50444e3661afa1c689b3dec30df889223991d5eec7f77d170ccd0d43ceecb9d33</originalsourceid><addsrcrecordid>eNo9kDFPwzAQhS0EEqUwsTF5Ry7n2I7jEVWlIEViAYktSu0LCUriyHYH_j2pUjHd071Pb_gIueew4RzMU2ak3OSgNM8vyIorVTCpZHY5Z9CaZTl8XZObGH8AoJAFrEi569Gm4JmfkmepxTDUPR28w74bv6lvaGoDxtb3jtpjCDgm6nDC0eFokfqRJhwmDHU6BrwlV03dR7w73zX5fNl9bF9Z-b5_2z6XzGYKElMgpUSR57xuam7zwhyEQyvANUVhskwYw51CtLrR2nEN1jpwUtj5dTBOiDV5XHZt8DEGbKopdEMdfisO1UlEdRJRLSJm-mGhO0T8J8_lH_NYWko</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Electro-opto-thermal modeling of threshold current dependence on temperature</title><source>IEEE Electronic Library (IEL)</source><creator>Ellis, D.S. ; Xu, J.M.</creator><creatorcontrib>Ellis, D.S. ; Xu, J.M.</creatorcontrib><description>A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et al. (1995). Aided with detailed knowledge so obtained of each contributor to the threshold current, attempts are made to gain insights into the well-known Pankove and other newly proposed empirical relations. The relative importance of the various mechanisms are evaluated, and self-heating is shown as an important factor determining the threshold current at high temperature.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/2944.605716</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>IEEE</publisher><subject>Chemical lasers ; Indium phosphide ; Integrated circuit modeling ; Laser modes ; Quantum well lasers ; Semiconductor lasers ; Strain measurement ; Temperature dependence ; Temperature sensors ; Threshold current</subject><ispartof>IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.640-648</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c250t-50444e3661afa1c689b3dec30df889223991d5eec7f77d170ccd0d43ceecb9d33</citedby><cites>FETCH-LOGICAL-c250t-50444e3661afa1c689b3dec30df889223991d5eec7f77d170ccd0d43ceecb9d33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/605716$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/605716$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ellis, D.S.</creatorcontrib><creatorcontrib>Xu, J.M.</creatorcontrib><title>Electro-opto-thermal modeling of threshold current dependence on temperature</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et al. (1995). Aided with detailed knowledge so obtained of each contributor to the threshold current, attempts are made to gain insights into the well-known Pankove and other newly proposed empirical relations. The relative importance of the various mechanisms are evaluated, and self-heating is shown as an important factor determining the threshold current at high temperature.</description><subject>Chemical lasers</subject><subject>Indium phosphide</subject><subject>Integrated circuit modeling</subject><subject>Laser modes</subject><subject>Quantum well lasers</subject><subject>Semiconductor lasers</subject><subject>Strain measurement</subject><subject>Temperature dependence</subject><subject>Temperature sensors</subject><subject>Threshold current</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo9kDFPwzAQhS0EEqUwsTF5Ry7n2I7jEVWlIEViAYktSu0LCUriyHYH_j2pUjHd071Pb_gIueew4RzMU2ak3OSgNM8vyIorVTCpZHY5Z9CaZTl8XZObGH8AoJAFrEi569Gm4JmfkmepxTDUPR28w74bv6lvaGoDxtb3jtpjCDgm6nDC0eFokfqRJhwmDHU6BrwlV03dR7w73zX5fNl9bF9Z-b5_2z6XzGYKElMgpUSR57xuam7zwhyEQyvANUVhskwYw51CtLrR2nEN1jpwUtj5dTBOiDV5XHZt8DEGbKopdEMdfisO1UlEdRJRLSJm-mGhO0T8J8_lH_NYWko</recordid><startdate>199704</startdate><enddate>199704</enddate><creator>Ellis, D.S.</creator><creator>Xu, J.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199704</creationdate><title>Electro-opto-thermal modeling of threshold current dependence on temperature</title><author>Ellis, D.S. ; Xu, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c250t-50444e3661afa1c689b3dec30df889223991d5eec7f77d170ccd0d43ceecb9d33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Chemical lasers</topic><topic>Indium phosphide</topic><topic>Integrated circuit modeling</topic><topic>Laser modes</topic><topic>Quantum well lasers</topic><topic>Semiconductor lasers</topic><topic>Strain measurement</topic><topic>Temperature dependence</topic><topic>Temperature sensors</topic><topic>Threshold current</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ellis, D.S.</creatorcontrib><creatorcontrib>Xu, J.M.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE journal of selected topics in quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ellis, D.S.</au><au>Xu, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electro-opto-thermal modeling of threshold current dependence on temperature</atitle><jtitle>IEEE journal of selected topics in quantum electronics</jtitle><stitle>JSTQE</stitle><date>1997-04</date><risdate>1997</risdate><volume>3</volume><issue>2</issue><spage>640</spage><epage>648</epage><pages>640-648</pages><issn>1077-260X</issn><eissn>1558-4542</eissn><coden>IJSQEN</coden><abstract>A self-consistent model of semiconductor quantum-well (QW) lasers is presented and deployed here for the study of threshold current dependence on temperature. The simulated dependencies of threshold current-density on temperature and cavity lengths agree well with experiments published by Evans et al. (1995). Aided with detailed knowledge so obtained of each contributor to the threshold current, attempts are made to gain insights into the well-known Pankove and other newly proposed empirical relations. The relative importance of the various mechanisms are evaluated, and self-heating is shown as an important factor determining the threshold current at high temperature.</abstract><pub>IEEE</pub><doi>10.1109/2944.605716</doi><tpages>9</tpages></addata></record> |
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| ispartof | IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.640-648 |
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| recordid | cdi_ieee_primary_605716 |
| source | IEEE Electronic Library (IEL) |
| subjects | Chemical lasers Indium phosphide Integrated circuit modeling Laser modes Quantum well lasers Semiconductor lasers Strain measurement Temperature dependence Temperature sensors Threshold current |
| title | Electro-opto-thermal modeling of threshold current dependence on temperature |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T09%3A33%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Electro-opto-thermal%20modeling%20of%20threshold%20current%20dependence%20on%20temperature&rft.jtitle=IEEE%20journal%20of%20selected%20topics%20in%20quantum%20electronics&rft.au=Ellis,%20D.S.&rft.date=1997-04&rft.volume=3&rft.issue=2&rft.spage=640&rft.epage=648&rft.pages=640-648&rft.issn=1077-260X&rft.eissn=1558-4542&rft.coden=IJSQEN&rft_id=info:doi/10.1109/2944.605716&rft_dat=%3Ccrossref_RIE%3E10_1109_2944_605716%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=605716&rfr_iscdi=true |