Vertical-cavity lasers with an intracavity resonant detector

We demonstrate the first intracavity quantum-well photodetector within an InGaAs DBR QW VCSEL for top- and bottom-emitting structures. Minimal spontaneous emission is detected by the internal detector. Dark current is on the order of picoamperes, limited by our instrument noise floor. The internal d...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 1997-04, Vol.3 (2), p.416-421
Hauptverfasser: Lim, S.F., Li, G.S., Wupen Yuen, Chang-Hasnain, C.J.
Format: Artikel
Sprache:eng
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Zusammenfassung:We demonstrate the first intracavity quantum-well photodetector within an InGaAs DBR QW VCSEL for top- and bottom-emitting structures. Minimal spontaneous emission is detected by the internal detector. Dark current is on the order of picoamperes, limited by our instrument noise floor. The internal detector demonstrates high insensitivity to external ambient light as compared to an external detector. Combining various measurement techniques, we gain an understanding of such an integration and discuss the various ramifications of the issues surrounding the design, fabrication, and performance of these integrated VCSEL-detectors. This configuration facilitates flexible tailoring of the laser efficiency and the integrated detector responsivity.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.605687