Photoluminescence investigation of GaAs quantum nanostructures

We have studied the optical properties of droplet epitaxial quantum dots and quantum rings in the GaAs/GaAlAs system. Photoluminescence spectra measurements were performed in the temperature range from 4 to 300 K. The differences between the observed spectra and the electronic structure of quantum d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Podor, B., Nemcsics, A., Balazs, J., Makai, J., Stemmann, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Epitaxial growth Gallium arsenide Photoluminescence Photonic band gap Quantum dots Temperature dependence Temperature measurement
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