Photoluminescence investigation of GaAs quantum nanostructures

Photoluminescence investigation of GaAs quantum nanostructures

We have studied the optical properties of droplet epitaxial quantum dots and quantum rings in the GaAs/GaAlAs system. Photoluminescence spectra measurements were performed in the temperature range from 4 to 300 K. The differences between the observed spectra and the electronic structure of quantum d...

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Hauptverfasser: Podor, B., Nemcsics, A., Balazs, J., Makai, J., Stemmann, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Epitaxial growth
Gallium arsenide
Photoluminescence
Photonic band gap
Quantum dots
Temperature dependence
Temperature measurement
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Beschreibung
Zusammenfassung:We have studied the optical properties of droplet epitaxial quantum dots and quantum rings in the GaAs/GaAlAs system. Photoluminescence spectra measurements were performed in the temperature range from 4 to 300 K. The differences between the observed spectra and the electronic structure of quantum dots and quantum rings are briefly discussed.
ISSN:2161-2528
DOI:10.1109/ISSE.2011.6053945