Numerical analysis of cosmic radiation-induced failures in power diodes

Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point whe...

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Hauptverfasser: Weiss, C., Aschauer, S., Wachutka, G., Hartl, A., Hille, F., Pfirsch, F.
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Aschauer, S.
Wachutka, G.
Hartl, A.
Hille, F.
Pfirsch, F.
description Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.
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subjects Anodes
Current density
Heating
Plasma temperature
Silicon
Voltage measurement
title Numerical analysis of cosmic radiation-induced failures in power diodes
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