Numerical analysis of cosmic radiation-induced failures in power diodes
Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point whe...
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creator | Weiss, C. Aschauer, S. Wachutka, G. Hartl, A. Hille, F. Pfirsch, F. |
description | Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials. |
doi_str_mv | 10.1109/ESSDERC.2011.6044161 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_6044161</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6044161</ieee_id><sourcerecordid>6044161</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-7ed4aa791ea03c449ffafc1fc8a85316fe8d4fc4f3a08edf21828d2272aeee333</originalsourceid><addsrcrecordid>eNpVkM1KAzEURiMqWOo8gS7yAjPmJplJspSxVqEo2O7LJbmByPyUSQfp21uwG8_m42y-xWHsEUQFINzTart9WX21lRQAVSO0hgauWOGMBV0bI4yw5vqfG3HDFuCUKK01zR0rcv4WZ5rG1dYu2Ppj7mlKHjuOA3annDIfI_dj7pPnE4aExzQOZRrC7CnwiKmbJ8o8Dfww_tDEQxoD5Xt2G7HLVFx2yXavq137Vm4-1-_t86ZMThxLQ0EjGgeEQnmtXYwYPURv0dYKmkg26Oh1VCgshSjBShukNBKJSCm1ZA9_t-ns-8OUepxO-0sJ9QtjWlGi</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Numerical analysis of cosmic radiation-induced failures in power diodes</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Weiss, C. ; Aschauer, S. ; Wachutka, G. ; Hartl, A. ; Hille, F. ; Pfirsch, F.</creator><creatorcontrib>Weiss, C. ; Aschauer, S. ; Wachutka, G. ; Hartl, A. ; Hille, F. ; Pfirsch, F.</creatorcontrib><description>Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 9781457707070</identifier><identifier>ISBN: 1457707071</identifier><identifier>EISBN: 9781457707087</identifier><identifier>EISBN: 145770708X</identifier><identifier>EISBN: 1457707063</identifier><identifier>EISBN: 9781457707063</identifier><identifier>DOI: 10.1109/ESSDERC.2011.6044161</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Current density ; Heating ; Plasma temperature ; Silicon ; Voltage measurement</subject><ispartof>2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2011, p.355-358</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6044161$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6044161$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Weiss, C.</creatorcontrib><creatorcontrib>Aschauer, S.</creatorcontrib><creatorcontrib>Wachutka, G.</creatorcontrib><creatorcontrib>Hartl, A.</creatorcontrib><creatorcontrib>Hille, F.</creatorcontrib><creatorcontrib>Pfirsch, F.</creatorcontrib><title>Numerical analysis of cosmic radiation-induced failures in power diodes</title><title>2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)</title><addtitle>ESSDERC</addtitle><description>Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.</description><subject>Anodes</subject><subject>Current density</subject><subject>Heating</subject><subject>Plasma temperature</subject><subject>Silicon</subject><subject>Voltage measurement</subject><issn>1930-8876</issn><isbn>9781457707070</isbn><isbn>1457707071</isbn><isbn>9781457707087</isbn><isbn>145770708X</isbn><isbn>1457707063</isbn><isbn>9781457707063</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1KAzEURiMqWOo8gS7yAjPmJplJspSxVqEo2O7LJbmByPyUSQfp21uwG8_m42y-xWHsEUQFINzTart9WX21lRQAVSO0hgauWOGMBV0bI4yw5vqfG3HDFuCUKK01zR0rcv4WZ5rG1dYu2Ppj7mlKHjuOA3annDIfI_dj7pPnE4aExzQOZRrC7CnwiKmbJ8o8Dfww_tDEQxoD5Xt2G7HLVFx2yXavq137Vm4-1-_t86ZMThxLQ0EjGgeEQnmtXYwYPURv0dYKmkg26Oh1VCgshSjBShukNBKJSCm1ZA9_t-ns-8OUepxO-0sJ9QtjWlGi</recordid><startdate>201109</startdate><enddate>201109</enddate><creator>Weiss, C.</creator><creator>Aschauer, S.</creator><creator>Wachutka, G.</creator><creator>Hartl, A.</creator><creator>Hille, F.</creator><creator>Pfirsch, F.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201109</creationdate><title>Numerical analysis of cosmic radiation-induced failures in power diodes</title><author>Weiss, C. ; Aschauer, S. ; Wachutka, G. ; Hartl, A. ; Hille, F. ; Pfirsch, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7ed4aa791ea03c449ffafc1fc8a85316fe8d4fc4f3a08edf21828d2272aeee333</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Anodes</topic><topic>Current density</topic><topic>Heating</topic><topic>Plasma temperature</topic><topic>Silicon</topic><topic>Voltage measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Weiss, C.</creatorcontrib><creatorcontrib>Aschauer, S.</creatorcontrib><creatorcontrib>Wachutka, G.</creatorcontrib><creatorcontrib>Hartl, A.</creatorcontrib><creatorcontrib>Hille, F.</creatorcontrib><creatorcontrib>Pfirsch, F.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Weiss, C.</au><au>Aschauer, S.</au><au>Wachutka, G.</au><au>Hartl, A.</au><au>Hille, F.</au><au>Pfirsch, F.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Numerical analysis of cosmic radiation-induced failures in power diodes</atitle><btitle>2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)</btitle><stitle>ESSDERC</stitle><date>2011-09</date><risdate>2011</risdate><spage>355</spage><epage>358</epage><pages>355-358</pages><issn>1930-8876</issn><isbn>9781457707070</isbn><isbn>1457707071</isbn><eisbn>9781457707087</eisbn><eisbn>145770708X</eisbn><eisbn>1457707063</eisbn><eisbn>9781457707063</eisbn><abstract>Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2011.6044161</doi><tpages>4</tpages></addata></record> |
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subjects | Anodes Current density Heating Plasma temperature Silicon Voltage measurement |
title | Numerical analysis of cosmic radiation-induced failures in power diodes |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-19T02%3A51%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Numerical%20analysis%20of%20cosmic%20radiation-induced%20failures%20in%20power%20diodes&rft.btitle=2011%20Proceedings%20of%20the%20European%20Solid-State%20Device%20Research%20Conference%20(ESSDERC)&rft.au=Weiss,%20C.&rft.date=2011-09&rft.spage=355&rft.epage=358&rft.pages=355-358&rft.issn=1930-8876&rft.isbn=9781457707070&rft.isbn_list=1457707071&rft_id=info:doi/10.1109/ESSDERC.2011.6044161&rft_dat=%3Cieee_6IE%3E6044161%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781457707087&rft.eisbn_list=145770708X&rft.eisbn_list=1457707063&rft.eisbn_list=9781457707063&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6044161&rfr_iscdi=true |