Numerical analysis of cosmic radiation-induced failures in power diodes

Numerical analysis of cosmic radiation-induced failures in power diodes

Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point whe...

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Hauptverfasser: Weiss, C., Aschauer, S., Wachutka, G., Hartl, A., Hille, F., Pfirsch, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Current density
Heating
Plasma temperature
Silicon
Voltage measurement
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Beschreibung
Zusammenfassung:Silicon power diodes can run into thermal destruction due to cosmic radiation-induced effects. We performed electro-thermal coupled device simulations in order to explain the failure mechanism. The results are compared to ion irradiation experiments. We find a strong heating located at the point where the incident ion deposits charge with a temperature rise which can explain melting of used materials.
ISSN:1930-8876
DOI:10.1109/ESSDERC.2011.6044161