Nonlinear modelling of SiGe HBTs up to 50 GHz

Nonlinear modelling of SiGe HBTs up to 50 GHz

A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S parameters up to 50 GHz. It proved its usefulness...

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Bibliographische Detailangaben
Hauptverfasser: Rheinfelder, C., Rudolph, M., Beisswanger, F., Heinrich, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Germanium silicon alloys
Heterojunction bipolar transistors
Kirk field collapse effect
Leakage current
Microwave oscillators
MMICs
Resistors
Semiconductor process modeling
Silicon germanium
Temperature
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Beschreibung
Zusammenfassung:A new large-signal model for SiGe HBTs is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from measurements using a special procedure. The model yields excellent accuracy for DC and S parameters up to 50 GHz. It proved its usefulness in MMIC oscillator design.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.602939