A 70-dB, 3.1-10.6-GHz CMOS amplifier in low-power 90 nm CMOS

A 70-dB, 3.1-10.6-GHz CMOS amplifier in low-power 90 nm CMOS

This paper presents a novel high-gain CMOS amplifier suitable for ultra-wideband (UWB) applications. The proposed amplifier achieves a -3 dB bandwidth covering the entire FCC UWB spectrum from 3.1 GHz to 10.6 GHz with a very high gain of approximately 70 dB. The amplifier is an area-efficient, singl...

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Hauptverfasser: Vu, Tuan Anh, Sudalaiyandi, Shanthi, Hjortland, Hakon A., Naess, Oivind, Lande, Tor Sverre, Hamran, Svein Erik
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
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Beschreibung
Zusammenfassung:This paper presents a novel high-gain CMOS amplifier suitable for ultra-wideband (UWB) applications. The proposed amplifier achieves a -3 dB bandwidth covering the entire FCC UWB spectrum from 3.1 GHz to 10.6 GHz with a very high gain of approximately 70 dB. The amplifier is an area-efficient, single-inductor solution designed for TSMC 90 nm CMOS low-power process while consuming 25.1 mW from 1.2 V supply voltage.
ISSN:1548-3746
1558-3899
DOI:10.1109/MWSCAS.2011.6026639