A multi-physics model of the VJFET with a lateral channel

A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obv...

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Bibliographische Detailangaben

Hauptverfasser:	Herve, M., Youness, H., Dominique, T., Remi, R., Fabien, D., Damien, R., Christian, M., Dominique, B., Cyril, B., Regis, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Device characterisation Device modeling JFET JFETs Junctions Logic gates Mathematical model Power semiconductor device Semiconductor device modeling Silicon carbide Silicon Carbide (SiC)
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