A multi-physics model of the VJFET with a lateral channel

A multi-physics model of the VJFET with a lateral channel

A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obv...

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Bibliographische Detailangaben
Hauptverfasser: Herve, M., Youness, H., Dominique, T., Remi, R., Fabien, D., Damien, R., Christian, M., Dominique, B., Cyril, B., Regis, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Device characterisation
Device modeling
JFET
JFETs
Junctions
Logic gates
Mathematical model
Power semiconductor device
Semiconductor device modeling
Silicon carbide
Silicon Carbide (SiC)
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Beschreibung
Zusammenfassung:A multi-physics model of the VJFET with a lateral channel is presented. The model has been implemented and tested in SABER using the MAST language. The model includes an asymmetric representation of the lateral channel which is the main contribution of the paper. The blocking condition is not so obvious and it is presented in details. Each junction of the structure is represented as a Shockley pn-junction model in parallel with the associated junction capacitance. The comparison between simulations and experiments yields to satisfying results, both in static and dynamic conditions. The analysis of the remaining difficulties to be solved is given.