A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups

A 6-in-1 IGBT module performance evaluation platform determining the trade-off between dV/dt and turn-on loss of different IGBT / FwDi chip setups

Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system's EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The e...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Honsberg, M., Radke, T., Ishii, K., Manotobu, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
DC-DC power converters
EMC/EMI
IGBT
Insulated gate bipolar transistors
Logic gates
Loss measurement
Power Semiconductor device
Switched-mode power supply
Switches
Switching loss
Switching losses
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Achieving good loss performance by high switching speed at low gate resistance is trading-off with the system's EMI behaviour. An evaluation platform has been developed to characterize 6-in-1 IGBT modules and to determine their dV/dt versus turn-on loss as function of the gate resistance. The electrical investigation concludes with a chart indicating the trade-off between turn-on switching loss versus dV/dt parameterized as a function of the sum of internal and external gate resistance of a 150A/1200V 6-in-1 IGBT module. The SMPS part of the developed test platform solution has been thermally analysed.