Anodic bonding technique under low-temperature and low-voltage using evaporated glass

We have performed silicon-to-silicon anodic bonding using a glass layer deposited by electron beam evaporation. Wafers can be bonded at 135/spl deg/C with an applied voltage of 35 V/sub DC/, which enables application of this technique to the vacuum packaging of microelectronic devices, because its bonding temperature and voltage are low. From the experimental results, we have found that an evaporated glass layer more than 1 /spl mu/m thick was suitable for anodic bonding. We have also investigated the possibility of an evaporated glass layer as an insulating layer as well as a bonding layer.