Emission characterization of diamond coated Si FEAs

Emission characterization of diamond coated Si FEAs

Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode....

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Hauptverfasser: Zhirnov, V.V., Givargizov, E.I., Kandidov, A.V., Seleznev, B.V., Alimova, A.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cathodes
Coatings
Diodes
Field emitter arrays
Microelectronics
Phosphors
Pulse measurements
Silicon
Substrates
Testing
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creator Zhirnov, V.V.
Givargizov, E.I.
Kandidov, A.V.
Seleznev, B.V.
Alimova, A.N.
description Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.
doi_str_mv 10.1109/IVMC.1996.601824
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_601824</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>601824</ieee_id><sourcerecordid>601824</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-9658ebac2059ed45c7c685986e78a56c06bd83e9105d55e87b88ea176aa109c93</originalsourceid><addsrcrecordid>eNotj81KAzEURgMiqLV7cZUXmPGmyc3PsgxTLVRctLotd5JbjDgdmcxGn95KPZsPzuKDI8SdglopCA_rt-emViHY2oLyC3MhbsB50BqDwSsxL-UDThhEDXAtdNvnUvJwlPGdRooTj_mHpj8xHGTK1A_HJONAEye5zXLVLsutuDzQZ-H5_87E66rdNU_V5uVx3Sw3VVZgpipY9NxRXAAGTgaji9Zj8JadJ7QRbJe85qAAEyJ713nPpJwlOoXEoGfi_vybmXn_Neaexu_9OUv_AgC3Qao</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Emission characterization of diamond coated Si FEAs</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.</creator><creatorcontrib>Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.</creatorcontrib><description>Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.</description><identifier>ISBN: 0780335945</identifier><identifier>ISBN: 9780780335943</identifier><identifier>DOI: 10.1109/IVMC.1996.601824</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cathodes ; Coatings ; Diodes ; Field emitter arrays ; Microelectronics ; Phosphors ; Pulse measurements ; Silicon ; Substrates ; Testing</subject><ispartof>9th International Vacuum Microelectronics Conference, 1996, p.278-282</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/601824$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/601824$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Zhirnov, V.V.</creatorcontrib><creatorcontrib>Givargizov, E.I.</creatorcontrib><creatorcontrib>Kandidov, A.V.</creatorcontrib><creatorcontrib>Seleznev, B.V.</creatorcontrib><creatorcontrib>Alimova, A.N.</creatorcontrib><title>Emission characterization of diamond coated Si FEAs</title><title>9th International Vacuum Microelectronics Conference</title><addtitle>IVMC</addtitle><description>Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.</description><subject>Cathodes</subject><subject>Coatings</subject><subject>Diodes</subject><subject>Field emitter arrays</subject><subject>Microelectronics</subject><subject>Phosphors</subject><subject>Pulse measurements</subject><subject>Silicon</subject><subject>Substrates</subject><subject>Testing</subject><isbn>0780335945</isbn><isbn>9780780335943</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KAzEURgMiqLV7cZUXmPGmyc3PsgxTLVRctLotd5JbjDgdmcxGn95KPZsPzuKDI8SdglopCA_rt-emViHY2oLyC3MhbsB50BqDwSsxL-UDThhEDXAtdNvnUvJwlPGdRooTj_mHpj8xHGTK1A_HJONAEye5zXLVLsutuDzQZ-H5_87E66rdNU_V5uVx3Sw3VVZgpipY9NxRXAAGTgaji9Zj8JadJ7QRbJe85qAAEyJ713nPpJwlOoXEoGfi_vybmXn_Neaexu_9OUv_AgC3Qao</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Zhirnov, V.V.</creator><creator>Givargizov, E.I.</creator><creator>Kandidov, A.V.</creator><creator>Seleznev, B.V.</creator><creator>Alimova, A.N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Emission characterization of diamond coated Si FEAs</title><author>Zhirnov, V.V. ; Givargizov, E.I. ; Kandidov, A.V. ; Seleznev, B.V. ; Alimova, A.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-9658ebac2059ed45c7c685986e78a56c06bd83e9105d55e87b88ea176aa109c93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Cathodes</topic><topic>Coatings</topic><topic>Diodes</topic><topic>Field emitter arrays</topic><topic>Microelectronics</topic><topic>Phosphors</topic><topic>Pulse measurements</topic><topic>Silicon</topic><topic>Substrates</topic><topic>Testing</topic><toplevel>online_resources</toplevel><creatorcontrib>Zhirnov, V.V.</creatorcontrib><creatorcontrib>Givargizov, E.I.</creatorcontrib><creatorcontrib>Kandidov, A.V.</creatorcontrib><creatorcontrib>Seleznev, B.V.</creatorcontrib><creatorcontrib>Alimova, A.N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zhirnov, V.V.</au><au>Givargizov, E.I.</au><au>Kandidov, A.V.</au><au>Seleznev, B.V.</au><au>Alimova, A.N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Emission characterization of diamond coated Si FEAs</atitle><btitle>9th International Vacuum Microelectronics Conference</btitle><stitle>IVMC</stitle><date>1996</date><risdate>1996</risdate><spage>278</spage><epage>282</epage><pages>278-282</pages><isbn>0780335945</isbn><isbn>9780780335943</isbn><abstract>Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.</abstract><pub>IEEE</pub><doi>10.1109/IVMC.1996.601824</doi><tpages>5</tpages></addata></record>
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subjects Cathodes
Coatings
Diodes
Field emitter arrays
Microelectronics
Phosphors
Pulse measurements
Silicon
Substrates
Testing
title Emission characterization of diamond coated Si FEAs
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T20%3A29%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Emission%20characterization%20of%20diamond%20coated%20Si%20FEAs&rft.btitle=9th%20International%20Vacuum%20Microelectronics%20Conference&rft.au=Zhirnov,%20V.V.&rft.date=1996&rft.spage=278&rft.epage=282&rft.pages=278-282&rft.isbn=0780335945&rft.isbn_list=9780780335943&rft_id=info:doi/10.1109/IVMC.1996.601824&rft_dat=%3Cieee_6IE%3E601824%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=601824&rfr_iscdi=true