Emission characterization of diamond coated Si FEAs

Emission characterization of diamond coated Si FEAs

Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode....

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Hauptverfasser: Zhirnov, V.V., Givargizov, E.I., Kandidov, A.V., Seleznev, B.V., Alimova, A.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cathodes
Coatings
Diodes
Field emitter arrays
Microelectronics
Phosphors
Pulse measurements
Silicon
Substrates
Testing
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Zusammenfassung:Large-area arrays of Si tips (10/sup 3/-10/sup 6/ tips in an array) with diamond coating were tested in pulse and DC modes. The arrays demonstrated uniform emission, reproducible I-V plots and low emission threshold. The maximum current achieved with diamond coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes.
DOI:10.1109/IVMC.1996.601824