Influence of platinum bottom electrode on the piezoelectric performance of hot RF sputtered PZT films

Ferroelectric PZT thin films have been in-situ deposited on 8-inch wafers by a high volume production sputtering tool. The films were grown on oxidized Si substrates covered either with sputtered Ti/TiO 2 /Pt, sputtered Ti/TiO 2 /Pt/TiO 2 or evaporated Ti/Pt bottom electrodes and investigated with respect to their chemical composition, crystallographic and dielectric properties. Moreover the d 33,f and the e 31,f coefficients have been examined. At a chuck temperature of 600 °C the intended chemical composition is achieved to nucleate and grow the ferroelectric perovskite phase with a minimum of secondary non-piezoelectric phases. A Zr/(Zr+Ti) ratio of 0.53 has been achieved matching to the morphotropic phase boundary. Notable high e 31,f and d 33,f coefficients of 101 pm/V and -13.8 C/m 2 , respectively, have been obtained.