Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers
The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after...
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| creator | Kulubaeva, E. G. Naumova, O. V. Ilnitsky, M. A. Popov, V. P. |
| description | The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·10 12 cm -2 and 2.1·10 12 cm -2 for Dele-Cut and Unibond wafers, respectively. |
| doi_str_mv | 10.1109/EDM.2011.6006916 |
| format | Conference Proceeding |
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G. ; Naumova, O. V. ; Ilnitsky, M. A. ; Popov, V. P.</creator><creatorcontrib>Kulubaeva, E. G. ; Naumova, O. V. ; Ilnitsky, M. A. ; Popov, V. P.</creatorcontrib><description>The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·10 12 cm -2 and 2.1·10 12 cm -2 for Dele-Cut and Unibond wafers, respectively.</description><identifier>ISSN: 1815-3712</identifier><identifier>ISBN: 1612847935</identifier><identifier>ISBN: 9781612847931</identifier><identifier>EISBN: 9781612847948</identifier><identifier>EISBN: 1612847951</identifier><identifier>EISBN: 9781612847955</identifier><identifier>EISBN: 1612847943</identifier><identifier>DOI: 10.1109/EDM.2011.6006916</identifier><language>eng</language><publisher>IEEE</publisher><subject>buried oxide ; charge accumulation ; Dele-Cut ; gamma irradiation ; Logic gates ; MOSFETs ; Physics ; Radiation effects ; Silicon ; Silicon on insulator technology ; SOI MOSFET ; Threshold voltage ; Unibond</subject><ispartof>2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings, 2011, p.140-142</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6006916$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6006916$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kulubaeva, E. 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The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·10 12 cm -2 and 2.1·10 12 cm -2 for Dele-Cut and Unibond wafers, respectively.</description><subject>buried oxide</subject><subject>charge accumulation</subject><subject>Dele-Cut</subject><subject>gamma irradiation</subject><subject>Logic gates</subject><subject>MOSFETs</subject><subject>Physics</subject><subject>Radiation effects</subject><subject>Silicon</subject><subject>Silicon on insulator technology</subject><subject>SOI MOSFET</subject><subject>Threshold voltage</subject><subject>Unibond</subject><issn>1815-3712</issn><isbn>1612847935</isbn><isbn>9781612847931</isbn><isbn>9781612847948</isbn><isbn>1612847951</isbn><isbn>9781612847955</isbn><isbn>1612847943</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1UFFLwzAYjKjgnH0XfMkf6MzXJG3yKNucg40hm8_ja_MFIms7kor47y047-U4uDuOY-wRxAxA2OflYjsrBMCsFKK0UF6xzFYGSiiMqqwy1-z-X0h9wyZgQOeyguKOZSl9ihFlaa2UE_a-wrZFHtEFHELf8Ujp3HeJuO8j3-_WfLvbvy4PiXusY2hwIMdH24JONP8aOHaOf3Sh7kf-Rk8xPbBbj6dE2YWn7DDm52_5Zrdaz182ebBiyKvGFwheG7Ta1WRdYaQeFzv0snYglQdJ5FSFjUWlGzLaOUDQWpnaqlpO2dNfbSCi4zmGFuPP8XKI_AWtxVFw</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Kulubaeva, E. G.</creator><creator>Naumova, O. V.</creator><creator>Ilnitsky, M. A.</creator><creator>Popov, V. P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201106</creationdate><title>Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers</title><author>Kulubaeva, E. G. ; Naumova, O. V. ; Ilnitsky, M. A. ; Popov, V. P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-7cf2a1f58a95dbe9d2835284daf3bd134f13eed47ac9a45ce85dd1a15548b94b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>buried oxide</topic><topic>charge accumulation</topic><topic>Dele-Cut</topic><topic>gamma irradiation</topic><topic>Logic gates</topic><topic>MOSFETs</topic><topic>Physics</topic><topic>Radiation effects</topic><topic>Silicon</topic><topic>Silicon on insulator technology</topic><topic>SOI MOSFET</topic><topic>Threshold voltage</topic><topic>Unibond</topic><toplevel>online_resources</toplevel><creatorcontrib>Kulubaeva, E. G.</creatorcontrib><creatorcontrib>Naumova, O. V.</creatorcontrib><creatorcontrib>Ilnitsky, M. A.</creatorcontrib><creatorcontrib>Popov, V. P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kulubaeva, E. G.</au><au>Naumova, O. V.</au><au>Ilnitsky, M. A.</au><au>Popov, V. P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers</atitle><btitle>2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings</btitle><stitle>EDM</stitle><date>2011-06</date><risdate>2011</risdate><spage>140</spage><epage>142</epage><pages>140-142</pages><issn>1815-3712</issn><isbn>1612847935</isbn><isbn>9781612847931</isbn><eisbn>9781612847948</eisbn><eisbn>1612847951</eisbn><eisbn>9781612847955</eisbn><eisbn>1612847943</eisbn><abstract>The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·10 12 cm -2 and 2.1·10 12 cm -2 for Dele-Cut and Unibond wafers, respectively.</abstract><pub>IEEE</pub><doi>10.1109/EDM.2011.6006916</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1815-3712 |
| ispartof | 2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings, 2011, p.140-142 |
| issn | 1815-3712 |
| language | eng |
| recordid | cdi_ieee_primary_6006916 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | buried oxide charge accumulation Dele-Cut gamma irradiation Logic gates MOSFETs Physics Radiation effects Silicon Silicon on insulator technology SOI MOSFET Threshold voltage Unibond |
| title | Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers |
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