Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers

Gamma radiation response for SOI MOSFETs fabricated on DeleCut and Unibond wafers

The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after...

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Hauptverfasser: Kulubaeva, E. G., Naumova, O. V., Ilnitsky, M. A., Popov, V. P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
buried oxide
charge accumulation
Dele-Cut
gamma irradiation
Logic gates
MOSFETs
Physics
Radiation effects
Silicon
Silicon on insulator technology
SOI MOSFET
Threshold voltage
Unibond
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Zusammenfassung:The gamma radiation tolerance of silicon on insulator technology on Dele-Cut and Unibond materials was studied. The radiation response is characterized by threshold-voltage shifts of the back-gate n-channel SOI MOSFETs. The density of the effective positively charge accumulated in buried oxide after γ-irradiation at dose 1 Mrad was found to be 1.3·10 12 cm -2 and 2.1·10 12 cm -2 for Dele-Cut and Unibond wafers, respectively.
ISSN:1815-3712
DOI:10.1109/EDM.2011.6006916