A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process

In this letter, we propose a new fully logic-process-compatible multitime programmable (MTP) memory cell for high-density logic nonvolatile memory (NVM) applications. A very small logic NVM MTP cell has been demonstrated on pure 0.18-μm CMOS process and logic design rules without extra masking and p...

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Veröffentlicht in:IEEE electron device letters 2011-10, Vol.32 (10), p.1352-1354
Hauptverfasser: Haw-Yun Wu, Cheng-Wei Tsai, Chiu-Wang Lien, Chih, Y.-D, Chrong Jung Lin
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Sprache:eng
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Zusammenfassung:In this letter, we propose a new fully logic-process-compatible multitime programmable (MTP) memory cell for high-density logic nonvolatile memory (NVM) applications. A very small logic NVM MTP cell has been demonstrated on pure 0.18-μm CMOS process and logic design rules without extra masking and process steps. The MTP cell can be efficiently programmed and erased with a novel tiny contact coupling structure. Very small cell size, fast programming speed, and superior reliability characteristic make the new contact coupling gate MTP cell be one of the most promising solutions in advanced logic NVM application.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2163612