THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors

In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit re...

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Veröffentlicht in:	IEEE transactions on terahertz science and technology 2011-09, Vol.1 (1), p.25-32
Hauptverfasser:	Deal, W., Mei, X. B., Leong, K. M. K. H., Radisic, V., Sarkozy, S., Lai, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Active semiconductor circuit Coplanar waveguides Gain HEMTs Indium phosphide Semiconductor device measurement solid-state sensor solid-state source Substrates three-terminal device
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Beschreibung
Zusammenfassung:	In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal transistor technology has been used to realize amplifiers, mixers, and multipliers operating at 670 GHz. Transistor and processing technology, packaging technology, and circuit results at 670 GHz are described. The paper concludes with initial results from a 670-GHz InP HEMT receiver and trends for InP HEMT components.
ISSN:	2156-342X 2156-3446
DOI:	10.1109/TTHZ.2011.2159539