Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer

We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In/sub 0.53/Ga/sub 0.47/As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and...

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Hauptverfasser: Studenkov, P., Gokhale, M., Xu, L., Dries, J.C., Chao, C.-P., Garbuzov, D., Forrest, S.R.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In/sub 0.53/Ga/sub 0.47/As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and structure variations, without degrading performance. A record high coupling efficiency of 45% from the TG laser to the integrated passive waveguide is obtained.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600266