Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer
We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In/sub 0.53/Ga/sub 0.47/As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In/sub 0.53/Ga/sub 0.47/As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and structure variations, without degrading performance. A record high coupling efficiency of 45% from the TG laser to the integrated passive waveguide is obtained. |
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ISSN: | 1092-8669 |
DOI: | 10.1109/ICIPRM.1997.600266 |