Low damage reactive ion etching process for fabrication of ridge waveguide lasers

Low damage reactive ion etching process for fabrication of ridge waveguide lasers

The damage produced during CH/sub 4//H/sub 2/ reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge wave...

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Hauptverfasser: Qiu, B.C., Ooi, B.S., Bryce, A.C., Hicks, S.E., Wilkinson, C.D.W., De La Rue, N.M., Marsh, J.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical lasers
Dry etching
Hydrogen
Optical device fabrication
Optical waveguides
Optoelectronic devices
Photoluminescence
Plasma measurements
Waveguide lasers
Wet etching
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Beschreibung
Zusammenfassung:The damage produced during CH/sub 4//H/sub 2/ reactive ion etching (RIE) processes has been measured using low temperature photoluminescence. The damage depth profile was estimated and a low level damage RIE process has been developed. The process has been used to fabricate InGaAs/InGaAsP ridge waveguide lasers containing 5 quantum wells with threshold currents, 43-45 mA for 500 /spl mu/m lasers, that are indistinguishable from those of wet-etched devices.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600232