MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices

High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on m...

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Bibliographische Detailangaben
Hauptverfasser: Paraskevopoulos, A., Kunzel, H., Bottcher, J., Urmann, G., Hensel, H.J., Bozbek, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cleaning
Cooling
Corrugated surfaces
Indium phosphide
Molecular beam epitaxial growth
Optical pumping
Optical surface waves
Optoelectronic devices
Solids
Temperature
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Beschreibung
Zusammenfassung:High-quality InP material was grown with solid source molecular beam epitaxy (SSMBE) using a GaP source. Dry- as well as wet-etched corrugated quaternary surfaces (DFB-gratings) were successfully regrown with InP, fully planarized final surfaces were obtained in each case. Finally, InP regrowth on mesa structures demonstrates favourable conditions for butt-coupling integration schemes.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1997.600030