A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

A commercial 65nm CMOS technology for space applications: Heavy ion, proton and gamma test results and modeling

This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. When further using innovative rad-hard design techniques, electrical performances and radiation-hardness can be both m...

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Hauptverfasser: Roche, P., Gasiot, G., Uznanski, S., Daveau, J., Torras-Flaquer, J., Clerc, S., Harboe-Sorensen, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS integrated circuits
CMOS technology
Flip-flops
Neutrons
Protons
Random access memory
Temperature measurement
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Beschreibung
Zusammenfassung:This paper presents new experimental and modeling evidences that advanced commercial CMOS technologies get intrinsically harder against space radiations with technology downscaling. When further using innovative rad-hard design techniques, electrical performances and radiation-hardness can be both met in a commercial CMOS 65 nm.
ISSN:0379-6566
DOI:10.1109/RADECS.2009.5994696