Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

Optoelectronic 1/f noise of Avalanche Photodiodes (AlInAs/GaInAs/InP) dedicated to photonic instrumentation and telecommunication

We show for the first time, the results concerning low frequency noise (1HZ-10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation...

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Bibliographische Detailangaben
Hauptverfasser: Ouarets, S., Orsal, B., Lahrichi, M., Achouche, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
1/f noise
avalanche photodiode
Avalanche photodiodes
corner frequency
Dark current
excess noise coefficient
Indium phosphide
Leakage current
noise equivalent power
Optical noise
White noise
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Beschreibung
Zusammenfassung:We show for the first time, the results concerning low frequency noise (1HZ-10KHz) of Avalanche Photodiodes (APDs) AlInAs/GaInAs/InP manufactured on Indium Phosphide Substrate (InP). 1/f and multiplication noises are increasing as a function of the multiplication coefficient with the same variation in the power. This specific behavior is explained taking into account the physical properties of APDs.
DOI:10.1109/ICNF.2011.5994330