Heteroepitaxial growth of InN by PA-MOMBE

In this paper, high-quality wurtzite indium nitride was epi-grown by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. It was found that highly c-axis oriented InN...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Shou-Yi Kuo, Fang-I Lai, Wei-Chun Chen, Woei-Tyng Lin, Chien-Nan Hsiao
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium nitride heteroepitaxy InN Metalorganic molecular beam epitaxy Molecular beam epitaxial growth Plasma temperature Temperature measurement X-ray scattering
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!