Heteroepitaxial growth of InN by PA-MOMBE

In this paper, high-quality wurtzite indium nitride was epi-grown by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially-grown InN/GaN interface is sharp, and the spacing of the InN(0002) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm-1 attributed to the E 2 (high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved by using heteroepitaxy on GaN/sapphire templates.