The quantum confinement effect of InGaN/GaN nanorods by photoelectrochemical oxidation

In this study, the nanorods of 100-150nm diameter on an InGaN/GaN multi quantum well (MQW) structure were fabricated using self-assembled nickel metal nanomasks and inductively coupled plasma reactive ion etching. The photoelectron-chemical (PEC) methods were applied to oxidate the InGaN/GaN MQWs nanorods. After 5V/80min oxidation, the measured PL from the embedded InGaN/GaN MQWs shows an energy shift of 30meV and a smaller QCSE, which are caused by quantum confinement effect and the strain relaxation of MQWs. The blue shift range increased with decreasing MQWs diameter.