20-µW operation of an a-IGZO TFT-based RFID chip using purely NMOS "active" load logic gates with ultra-low-consumption power

20-µW operation of an a-IGZO TFT-based RFID chip using purely NMOS "active" load logic gates with ultra-low-consumption power

We fabricated the first RFID chip using amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a glass substrate. Logic gates with low-consumption current (~1 nA) and steep on/off switching was also proposed. The logic circuit achieved small enough power consumption (20 μW) for wireless operatio...

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Bibliographische Detailangaben
Hauptverfasser: Ozaki, H., Kawamura, T., Wakana, H., Yamazoe, T., Uchiyama, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Coils
Inverters
Logic circuits
Logic gates
Power demand
Radiofrequency identification
Thin film transistors
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Zusammenfassung:We fabricated the first RFID chip using amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) on a glass substrate. Logic gates with low-consumption current (~1 nA) and steep on/off switching was also proposed. The logic circuit achieved small enough power consumption (20 μW) for wireless operation and a wireless operation of the RFID tag was demonstrated.
ISSN:2158-5601
2158-5636