A true random number generator using time-dependent dielectric breakdown
A true random number generator (tRNG) is proposed that, for the first time, uses the random physical process of time to oxide breakdown under voltage stress. Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm 2 tRNG, called OxiGen, was fabricated in...
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| creator | Liu, Nurrachman Pinckney, N. Hanson, S. Sylvester, D. Blaauw, D. |
| description | A true random number generator (tRNG) is proposed that, for the first time, uses the random physical process of time to oxide breakdown under voltage stress. Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm 2 tRNG, called OxiGen, was fabricated in 65 nm CMOS, passes all 15 NIST randomness tests without post-processing and in a 3 month run generated sufficient bits for worst-case expected internet use while being |
| format | Conference Proceeding |
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Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm 2 tRNG, called OxiGen, was fabricated in 65 nm CMOS, passes all 15 NIST randomness tests without post-processing and in a 3 month run generated sufficient bits for worst-case expected internet use while being <;10% exhausted.</description><identifier>ISSN: 2158-5601</identifier><identifier>ISBN: 9781612841755</identifier><identifier>ISBN: 1612841759</identifier><identifier>EISSN: 2158-5636</identifier><identifier>EISBN: 4863481667</identifier><identifier>EISBN: 9784863481664</identifier><language>eng</language><publisher>IEEE</publisher><subject>Arrays ; Electric breakdown ; Generators ; NIST ; Radiation detectors ; Stress</subject><ispartof>2011 Symposium on VLSI Circuits - Digest of Technical Papers, 2011, p.216-217</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5986112$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,54918</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5986112$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liu, Nurrachman</creatorcontrib><creatorcontrib>Pinckney, N.</creatorcontrib><creatorcontrib>Hanson, S.</creatorcontrib><creatorcontrib>Sylvester, D.</creatorcontrib><creatorcontrib>Blaauw, D.</creatorcontrib><title>A true random number generator using time-dependent dielectric breakdown</title><title>2011 Symposium on VLSI Circuits - Digest of Technical Papers</title><addtitle>VLSIC</addtitle><description>A true random number generator (tRNG) is proposed that, for the first time, uses the random physical process of time to oxide breakdown under voltage stress. Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. 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Time to breakdown is repeatedly measured with a counter and serialized into a bitstream. The 1200 μm 2 tRNG, called OxiGen, was fabricated in 65 nm CMOS, passes all 15 NIST randomness tests without post-processing and in a 3 month run generated sufficient bits for worst-case expected internet use while being <;10% exhausted.</abstract><pub>IEEE</pub></addata></record> |
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| issn | 2158-5601 2158-5636 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Arrays Electric breakdown Generators NIST Radiation detectors Stress |
| title | A true random number generator using time-dependent dielectric breakdown |
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