A new approach of NAND flash cell trap analysis using RTN characteristics

A new approach of NAND flash cell trap analysis using RTN characteristics

We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods,...

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Hauptverfasser: Daewoong Kang, Sungbok Lee, Hyun-Mog Park, Dong-jun Lee, Jun Kim, Junho Seo, Chikyoung Lee, Cheol Song, Chang-Sub Lee, Hyungcheol Shin, Jaihyuk Song, Haebum Lee, Jeong-Hyuk Choi, Young-Hyun Jun
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electric fields
Etching
Flash memory
Fluctuations
Threshold voltage
Time measurement
Very large scale integration
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Zusammenfassung:We measured RTN characteristics in NAND flash cell array and test structure having 27 nm design rule depending on different program and erase states. From these measured results, we analyzed the trap properties along the active width direction from of NAND flash cell. Using special analysis methods, we verified the validity of this characterization tool and applied it to various processed NAND flash memory cells.
ISSN:0743-1562