Bridging design and manufacture of analog/mixed-signal circuits in advanced CMOS

We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal (AMS) circuits in processors. We introduce I D -based MOSFET transconductance measurements and a new measurement of drain saturation margin at r...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jia Feng, Loke, A. L. S., Tin Tin Wee, Lackey, C. O., Okada, L. A., Schwan, C. T., Mantei, T., Morgan, J. H., Herden, M. M., Cooper, J. G., Zhi-Yuan Wu, Jung-Suk Goo, Xin Li, Icel, A. B., Bair, L. A., Fischette, D. M., Doyle, B. A., Fang, E. S., Leary, B. M., Krishnan, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present device and circuit characterization resulting from technology/design co-development to improve the design and manufacture of analog/mixed-signal (AMS) circuits in processors. We introduce I D -based MOSFET transconductance measurements and a new measurement of drain saturation margin at realistic analog biasing. We also describe routinely monitored scribe lane replicas of key AMS passives and circuits. Such measurements enable construction and validation of compact models better suited to AMS needs than those historically tailored for logic design.
ISSN:0743-1562