Electrical method on evaluation of power device chip's welding quality

Electrical method on evaluation of power device chip's welding quality

Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Shuojie She, Guangbo Gao, Yueqiang Huang, Gandhi, Darshan, Choudhry, Mahmood, Changzhi Lv
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrical resistance measurement
Insulated gate bipolar transistors
Semiconductor device measurement
solder layer
structure function
Temperature measurement
Thermal resistance
Welding
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 102
container_issue
container_start_page 99
container_title
container_volume
creator Shuojie She
Guangbo Gao
Yueqiang Huang
Gandhi, Darshan
Choudhry, Mahmood
Changzhi Lv
description Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the device chips' welding quality, by means of analyzing thermal resistance and structure function of the power devices.
doi_str_mv 10.1109/ICRMS.2011.5979242
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5979242</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5979242</ieee_id><sourcerecordid>5979242</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-4be80dc95888c7f7f7984e1fa32743a7cefd522d7418e5f30754b27887b0956c3</originalsourceid><addsrcrecordid>eNo1j01Lw0AYhFdEUGv-gF725ilxvz-OUlotVATtvWx237Ur2yYmaUv_vQHrzGGeuQwMQveUVJQS-7SYfrx9VoxQWkmrLRPsAt1SRZkRSil6iQqrzX_X8hoVff9NRillFdc3aD7L4IcueZfxFoZNE3Czw3Bwee-GNGITcdscocMBDskD9pvUPvb4CDmk3Rf-2buchtMduoou91Ccc4JW89lq-lou318W0-dlmSwZSlGDIcFbaYzxOo62RgCNjjMtuNMeYpCMBS2oARk50VLUTBuja2Kl8nyCHv5mEwCs2y5tXXdan5_zX_udTHs</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electrical method on evaluation of power device chip's welding quality</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Shuojie She ; Guangbo Gao ; Yueqiang Huang ; Gandhi, Darshan ; Choudhry, Mahmood ; Changzhi Lv</creator><creatorcontrib>Shuojie She ; Guangbo Gao ; Yueqiang Huang ; Gandhi, Darshan ; Choudhry, Mahmood ; Changzhi Lv</creatorcontrib><description>Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the device chips' welding quality, by means of analyzing thermal resistance and structure function of the power devices.</description><identifier>ISBN: 9781612846675</identifier><identifier>ISBN: 161284667X</identifier><identifier>EISBN: 1612846661</identifier><identifier>EISBN: 9781612846651</identifier><identifier>EISBN: 1612846653</identifier><identifier>EISBN: 9781612846668</identifier><identifier>DOI: 10.1109/ICRMS.2011.5979242</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrical resistance measurement ; Insulated gate bipolar transistors ; Semiconductor device measurement ; solder layer ; structure function ; Temperature measurement ; Thermal resistance ; Welding</subject><ispartof>The Proceedings of 2011 9th International Conference on Reliability, Maintainability and Safety, 2011, p.99-102</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5979242$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27904,54897</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5979242$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shuojie She</creatorcontrib><creatorcontrib>Guangbo Gao</creatorcontrib><creatorcontrib>Yueqiang Huang</creatorcontrib><creatorcontrib>Gandhi, Darshan</creatorcontrib><creatorcontrib>Choudhry, Mahmood</creatorcontrib><creatorcontrib>Changzhi Lv</creatorcontrib><title>Electrical method on evaluation of power device chip's welding quality</title><title>The Proceedings of 2011 9th International Conference on Reliability, Maintainability and Safety</title><addtitle>ICRMS</addtitle><description>Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the device chips' welding quality, by means of analyzing thermal resistance and structure function of the power devices.</description><subject>Electrical resistance measurement</subject><subject>Insulated gate bipolar transistors</subject><subject>Semiconductor device measurement</subject><subject>solder layer</subject><subject>structure function</subject><subject>Temperature measurement</subject><subject>Thermal resistance</subject><subject>Welding</subject><isbn>9781612846675</isbn><isbn>161284667X</isbn><isbn>1612846661</isbn><isbn>9781612846651</isbn><isbn>1612846653</isbn><isbn>9781612846668</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1j01Lw0AYhFdEUGv-gF725ilxvz-OUlotVATtvWx237Ur2yYmaUv_vQHrzGGeuQwMQveUVJQS-7SYfrx9VoxQWkmrLRPsAt1SRZkRSil6iQqrzX_X8hoVff9NRillFdc3aD7L4IcueZfxFoZNE3Czw3Bwee-GNGITcdscocMBDskD9pvUPvb4CDmk3Rf-2buchtMduoou91Ccc4JW89lq-lou318W0-dlmSwZSlGDIcFbaYzxOo62RgCNjjMtuNMeYpCMBS2oARk50VLUTBuja2Kl8nyCHv5mEwCs2y5tXXdan5_zX_udTHs</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Shuojie She</creator><creator>Guangbo Gao</creator><creator>Yueqiang Huang</creator><creator>Gandhi, Darshan</creator><creator>Choudhry, Mahmood</creator><creator>Changzhi Lv</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201106</creationdate><title>Electrical method on evaluation of power device chip's welding quality</title><author>Shuojie She ; Guangbo Gao ; Yueqiang Huang ; Gandhi, Darshan ; Choudhry, Mahmood ; Changzhi Lv</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-4be80dc95888c7f7f7984e1fa32743a7cefd522d7418e5f30754b27887b0956c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Electrical resistance measurement</topic><topic>Insulated gate bipolar transistors</topic><topic>Semiconductor device measurement</topic><topic>solder layer</topic><topic>structure function</topic><topic>Temperature measurement</topic><topic>Thermal resistance</topic><topic>Welding</topic><toplevel>online_resources</toplevel><creatorcontrib>Shuojie She</creatorcontrib><creatorcontrib>Guangbo Gao</creatorcontrib><creatorcontrib>Yueqiang Huang</creatorcontrib><creatorcontrib>Gandhi, Darshan</creatorcontrib><creatorcontrib>Choudhry, Mahmood</creatorcontrib><creatorcontrib>Changzhi Lv</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shuojie She</au><au>Guangbo Gao</au><au>Yueqiang Huang</au><au>Gandhi, Darshan</au><au>Choudhry, Mahmood</au><au>Changzhi Lv</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrical method on evaluation of power device chip's welding quality</atitle><btitle>The Proceedings of 2011 9th International Conference on Reliability, Maintainability and Safety</btitle><stitle>ICRMS</stitle><date>2011-06</date><risdate>2011</risdate><spage>99</spage><epage>102</epage><pages>99-102</pages><isbn>9781612846675</isbn><isbn>161284667X</isbn><eisbn>1612846661</eisbn><eisbn>9781612846651</eisbn><eisbn>1612846653</eisbn><eisbn>9781612846668</eisbn><abstract>Power devices are widely used in household appliances and industrial products even in the space industry. Because of defects in the package, their electrical parameters might change. Some of them may even lead to irreparable damage on devices. This paper presents a new method for evaluation of the device chips' welding quality, by means of analyzing thermal resistance and structure function of the power devices.</abstract><pub>IEEE</pub><doi>10.1109/ICRMS.2011.5979242</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 9781612846675
ispartof The Proceedings of 2011 9th International Conference on Reliability, Maintainability and Safety, 2011, p.99-102
issn
language eng
recordid cdi_ieee_primary_5979242
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electrical resistance measurement
Insulated gate bipolar transistors
Semiconductor device measurement
solder layer
structure function
Temperature measurement
Thermal resistance
Welding
title Electrical method on evaluation of power device chip's welding quality
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T09%3A23%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electrical%20method%20on%20evaluation%20of%20power%20device%20chip's%20welding%20quality&rft.btitle=The%20Proceedings%20of%202011%209th%20International%20Conference%20on%20Reliability,%20Maintainability%20and%20Safety&rft.au=Shuojie%20She&rft.date=2011-06&rft.spage=99&rft.epage=102&rft.pages=99-102&rft.isbn=9781612846675&rft.isbn_list=161284667X&rft_id=info:doi/10.1109/ICRMS.2011.5979242&rft_dat=%3Cieee_6IE%3E5979242%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1612846661&rft.eisbn_list=9781612846651&rft.eisbn_list=1612846653&rft.eisbn_list=9781612846668&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5979242&rfr_iscdi=true