BN/Graphene/BN Transistors for RF Applications
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...
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| Veröffentlicht in: | IEEE electron device letters 2011-09, Vol.32 (9), p.1209-1211 |
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| container_end_page | 1211 |
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| container_issue | 9 |
| container_start_page | 1209 |
| container_title | IEEE electron device letters |
| container_volume | 32 |
| creator | Han Wang Taychatanapat, T. Hsu, A. Watanabe, K. Taniguchi, T. Jarillo-Herrero, P. Palacios, T. |
| description | In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics. |
| doi_str_mv | 10.1109/LED.2011.2160611 |
| format | Article |
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This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2011.2160611</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum oxide ; Applied sciences ; Boron nitride ; Compound structure devices ; Devices ; Dielectrics ; Electronics ; Exact sciences and technology ; FETs ; Graphene ; Graphene field-effect transistors (GFETs) ; hexagonal boron nitride (hBN) ; Logic gates ; Preserves ; Radio frequencies ; Radio frequency ; radio frequency (RF) ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Transistors</subject><ispartof>IEEE electron device letters, 2011-09, Vol.32 (9), p.1209-1211</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2011</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c427t-ffcd16e2ee81823ea860f8862a9e16d6aad967abbb1b501617339f343790fc6f3</citedby><cites>FETCH-LOGICAL-c427t-ffcd16e2ee81823ea860f8862a9e16d6aad967abbb1b501617339f343790fc6f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5978801$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5978801$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24512885$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Han Wang</creatorcontrib><creatorcontrib>Taychatanapat, T.</creatorcontrib><creatorcontrib>Hsu, A.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Taniguchi, T.</creatorcontrib><creatorcontrib>Jarillo-Herrero, P.</creatorcontrib><creatorcontrib>Palacios, T.</creatorcontrib><title>BN/Graphene/BN Transistors for RF Applications</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.</description><subject>Aluminum oxide</subject><subject>Applied sciences</subject><subject>Boron nitride</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>Dielectrics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>Graphene</subject><subject>Graphene field-effect transistors (GFETs)</subject><subject>hexagonal boron nitride (hBN)</subject><subject>Logic gates</subject><subject>Preserves</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>radio frequency (RF)</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kM9LwzAUgIMoOKd3wUsRRC_t8pLm13GbcwpjgsxzSbMEO7q2Jt3B_96MjR08eHqH970P3ofQLeAMAKvRYvacEQyQEeCYA5yhATAmU8w4PUcDLHJIKWB-ia5C2GAMeS7yAcomy9Hc6-7LNnY0WSYrr5tQhb71IXGtTz5eknHX1ZXRfdU24RpdOF0He3OcQ_T5MltNX9PF-_xtOl6kJieiT50za-CWWCtBEmq15NhJyYlWFviaa71WXOiyLKFkGDgISpWjORUKO8MdHaLHg7fz7ffOhr7YVsHYutaNbXehUKAUxYLlkXz6lwQc60BESUTv_6Cbdueb-Ef08cgJuffhA2R8G4K3ruh8tdX-J5qKfekili72pYtj6XjycPTqYHTtYkJThdMdyRkQKVnk7g5cZa09rZkSUmKgv-EAgyQ</recordid><startdate>20110901</startdate><enddate>20110901</enddate><creator>Han Wang</creator><creator>Taychatanapat, T.</creator><creator>Hsu, A.</creator><creator>Watanabe, K.</creator><creator>Taniguchi, T.</creator><creator>Jarillo-Herrero, P.</creator><creator>Palacios, T.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Solid state devices</topic><topic>Substrates</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Han Wang</creatorcontrib><creatorcontrib>Taychatanapat, T.</creatorcontrib><creatorcontrib>Hsu, A.</creatorcontrib><creatorcontrib>Watanabe, K.</creatorcontrib><creatorcontrib>Taniguchi, T.</creatorcontrib><creatorcontrib>Jarillo-Herrero, P.</creatorcontrib><creatorcontrib>Palacios, T.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Han Wang</au><au>Taychatanapat, T.</au><au>Hsu, A.</au><au>Watanabe, K.</au><au>Taniguchi, T.</au><au>Jarillo-Herrero, P.</au><au>Palacios, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>BN/Graphene/BN Transistors for RF Applications</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2011-09-01</date><risdate>2011</risdate><volume>32</volume><issue>9</issue><spage>1209</spage><epage>1211</epage><pages>1209-1211</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. 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| ispartof | IEEE electron device letters, 2011-09, Vol.32 (9), p.1209-1211 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum oxide Applied sciences Boron nitride Compound structure devices Devices Dielectrics Electronics Exact sciences and technology FETs Graphene Graphene field-effect transistors (GFETs) hexagonal boron nitride (hBN) Logic gates Preserves Radio frequencies Radio frequency radio frequency (RF) Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors |
| title | BN/Graphene/BN Transistors for RF Applications |
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