BN/Graphene/BN Transistors for RF Applications

BN/Graphene/BN Transistors for RF Applications

In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to en...

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Veröffentlicht in:IEEE electron device letters 2011-09, Vol.32 (9), p.1209-1211
Hauptverfasser: Han Wang, Taychatanapat, T., Hsu, A., Watanabe, K., Taniguchi, T., Jarillo-Herrero, P., Palacios, T.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum oxide
Applied sciences
Boron nitride
Compound structure devices
Devices
Dielectrics
Electronics
Exact sciences and technology
FETs
Graphene
Graphene field-effect transistors (GFETs)
hexagonal boron nitride (hBN)
Logic gates
Preserves
Radio frequencies
Radio frequency
radio frequency (RF)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
Transistors
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Zusammenfassung:In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2160611