Electrical estimation of channel dopant uniformity using test MOSFET array

Electrical estimation of channel dopant uniformity using test MOSFET array

The dopant uniformity in an MOSFET channel is estimated using the test MOSFET array which includes many MOSFETs with different channel length. Takeuchi coefficient as a function of the channel length is calculated from the measured threshold voltage data. The electrical channel length as a function...

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Bibliographische Detailangaben
Hauptverfasser: Terada, K., Sanai, K., Tsuji, K., Tsunomura, T., Nishida, A., Mogami, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Arrays
Channel estimation
Logic gates
MOSFET circuits
Resistance
Threshold voltage
Voltage measurement
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Beschreibung
Zusammenfassung:The dopant uniformity in an MOSFET channel is estimated using the test MOSFET array which includes many MOSFETs with different channel length. Takeuchi coefficient as a function of the channel length is calculated from the measured threshold voltage data. The electrical channel length as a function of the gate voltage is extracted using channel resistance method. It is found that those data show the similar degree of the dopant uniformity for MOSFETs having various channel structures.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2011.5976871