Contact resistance measurement structures for high frequencies

Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Roy, D., Pijper, R. M. T., Tiemeijer, L. F., Wolters, R. A. M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Knowledge of the interfacial contact impedance offered by the device at its operating frequency range is crucial for accurate modelling and understanding of the device. In this article, a novel modified TLM test-structure has been devised to extract interfacial contact parameters at frequencies upto 4 GHz. S-parameter measurements performed on these test-structures were validated with the measurements on identical test-structures suited for conventional DC four point force-sense measurements. Based on these measurements the electrical model for the metal-to-PCM interface is derived for different contact impedances.
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2011.5976859