Modeling the frequency dependence of MOSFET gate capacitance

This paper investigates the frequency dependence of gate capacitance C gg of MOS structures. In inversion C gg decreases as frequency increases due to charge inertia and gate resistance effects. In accumulation C gg also decreases as frequency increases; we demonstrate that this is due to bulk and, to a lesser extent, gate resistances. We show that the non-quasi-static PSP compact model can accurately represent the frequency dependence of MOS transistor C gg in all regions of operation, and derive a new analytic frequency dependence model for C gg .