Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz

Simplified nonquasi-static FET modelling approach experimentally validated up to 118.5 GHz

In this paper two similar simplified nonquasi-static approaches are applied for high-frequency large-signal FET prediction. Both account for low-frequency dispersion and use a simplified extraction process through the use of linear delays. Excellent results are obtained from dc up to the device f/su...

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Hauptverfasser: Fernandez-Barciela, M., Tasker, P.J., Demmler, M., Campos-Roca, Y., Messler, H., Sanchez, E., Curras-Francos, C., Schlechtweg, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Delay effects
Delay lines
FETs
Frequency
Microwave Theory and Techniques Society
MMICs
Predictive models
Proposals
Voltage
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Beschreibung
Zusammenfassung:In this paper two similar simplified nonquasi-static approaches are applied for high-frequency large-signal FET prediction. Both account for low-frequency dispersion and use a simplified extraction process through the use of linear delays. Excellent results are obtained from dc up to the device f/sub T/ frequencies, even when f/sub T/ is 120 GHz. For low-frequency prediction a simple quasi-static extrinsic approach can produce excellent results thus further simplifying modelling. The influence of including the low-frequency dispersion modelling is also taken into account.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.596614