Below bandgap excitation of SnO2 nanowires: The relaxation of trap states

Below bandgap excitation of SnO2 nanowires: The relaxation of trap states

Carrier relaxation of SnO 2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity dependent and recovers uniformly with a biexponential relaxation route.

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Bibliographische Detailangaben
Hauptverfasser: Chi, S.-H, Mazeina, L., Prokes, S. M., Caldwell, J. D., Beadie, G., Flom, S. R., Shirk, J. S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Energy measurement
Kinetic theory
Laboratories
Nanowires
Photonic band gap
Transient analysis
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Beschreibung
Zusammenfassung:Carrier relaxation of SnO 2 nanowires is investigated by excitation at 3.2 eV, ~0.4 eV below the bandgap. The excited state transmission spectrum from 1.9-2.7 eV is intensity dependent and recovers uniformly with a biexponential relaxation route.
ISSN:2160-8989
2160-9004
DOI:10.1364/cleo_at.2011.jwa71