AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy

AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy

We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.

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Hauptverfasser: Chen-Kai Kao, Yitao Liao, Thomidis, Christos, Moldawer, Adam, Bhattarai, Dipesh, Haiding Sun, Moustakas, Theodore D.
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Sprache:eng
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Aluminum gallium nitride
Light emitting diodes
Molecular beam epitaxial growth
Optical device fabrication
Power generation
Stimulated emission
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creator Chen-Kai Kao
Yitao Liao
Thomidis, Christos
Moldawer, Adam
Bhattarai, Dipesh
Haiding Sun
Moustakas, Theodore D.
description We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.
doi_str_mv 10.1364/cleo_si.2011.ctuu4
format Conference Proceeding
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subjects Aluminum gallium nitride
Light emitting diodes
Molecular beam epitaxial growth
Optical device fabrication
Power generation
Stimulated emission
title AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy
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