AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy

AlGaN-based deep ultraviolet LEDs by plasma assisted molecular beam epitaxy

We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.

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Bibliographische Detailangaben
Hauptverfasser: Chen-Kai Kao, Yitao Liao, Thomidis, Christos, Moldawer, Adam, Bhattarai, Dipesh, Haiding Sun, Moustakas, Theodore D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Light emitting diodes
Molecular beam epitaxial growth
Optical device fabrication
Power generation
Stimulated emission
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Beschreibung
Zusammenfassung:We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.
ISSN:2160-8989
2160-9004
DOI:10.1364/cleo_si.2011.ctuu4