Passively mode-locked semiconductor laser for coherent population trapping in 87Rb

Passively mode-locked semiconductor laser for coherent population trapping in 87Rb

Passively mode-locked semiconductor laser for coherent population trapping in 87 Rb is reported. The laser material used is a 793nm GaAs/Al x Ga 1-x As single quantum well (QW) graded index separate confinement heterostructure.

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Bibliographische Detailangaben
Hauptverfasser: Tandoi, G., Seunarine, K., Ironside, C. N., Bryce, C. A., McDougall, S. D., Meredith, W., Luiten, A. N.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:Passively mode-locked semiconductor laser for coherent population trapping in 87 Rb is reported. The laser material used is a 793nm GaAs/Al x Ga 1-x As single quantum well (QW) graded index separate confinement heterostructure.
DOI:10.1109/CLEOE.2011.5942610