94GHz power-combining power amplifier with +13dBm saturated output power in 65nm CMOS

A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm 2 . Amplifier is implemented in a...

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Bibliographische Detailangaben
Hauptverfasser:	Sandstrom, D., Martineau, B., Varonen, M., Karkkainen, M., Cathelin, A., Halonen, K. A. I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitors CMOS CMOS integrated circuits CMOS technology ESD protection Fingers millimeter-wave integrated circuits Power amplifiers Power generation transformers Transmission line measurements
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Beschreibung
Zusammenfassung:	A power combining power amplifier utilizing cascode topology and transformer-based matching elements is presented in this paper. The amplifier achieves +13 dBm saturated output power at 94 GHz with a standard 1.2 V supply and occupies an active area of only 0.069 mm 2 . Amplifier is implemented in an industrial 65nm CMOS process taking into account reliability issues at high output power level. The amplifier is also ESD-protected at the input and at the output.
ISSN:	1529-2517 2375-0995
DOI:	10.1109/RFIC.2011.5940691