Time-dependency of the threshold voltage in memristive devices

Time-dependency of the threshold voltage in memristive devices

We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of ope...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lehtonen, Eero, Poikonen, Jussi, Laiho, Mika, Wei Lu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Mathematical model
Memristors
Nanoscale devices
Programming
Resistance
Switches
Threshold voltage
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Beschreibung
Zusammenfassung:We describe a generic exponential model with four parameters for thin-film memristive devices. This model is used to analyze the time dependency of the threshold voltage which defines the transition between non-programming and programming phases of the device. A relationship between timescale of operation and threshold voltage is derived. Furthermore, self-terminating programming is considered using the results of this analysis. Finally, the effect of parameter variations on the threshold voltage is analyzed.
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2011.5938048