Integration of Solar Cells on Top of CMOS Chips-Part II: CIGS Solar Cells

We present the monolithic integration of deep-submicrometer complementary metal-oxide-semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 2011-08, Vol.58 (8), p.2620-2627
Hauptverfasser: Jiwu Lu, Wei Liu, Kovalgin, Alexey Y., Yun Sun, Schmitz, Jurriaan
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present the monolithic integration of deep-submicrometer complementary metal-oxide-semiconductor (CMOS) microchips with copper indium gallium (di)selenide (CIGS) solar cells. Solar cells are manufactured directly on unpackaged CMOS chips. The microchips maintain comparable electronic performance, and the solar cells on top show an efficiency of 8.4 ± 0.8% and a yield of 84%, both values being close to the glass reference. The main integration issues, i.e., adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress, can be resolved while maintaining standard photovoltaic processing. A tight process window is found for the manufacturing of CIGS solar cells on the CMOS side of the microchip. More process margin exists for backside integration.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2156799