Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications

The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Liptaj, M., Galajda, P., Kmec, M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	ASIC BiCMOS integrated circuits Current measurement differential amplifier Gain Metals Semiconductor device measurement SiGe BiCMOS Silicon germanium Transistors UWB (Ultra-Wideband)
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!