Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications

Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications

The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufac...

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Bibliographische Detailangaben
Hauptverfasser: Liptaj, M., Galajda, P., Kmec, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
ASIC
BiCMOS integrated circuits
Current measurement
differential amplifier
Gain
Metals
Semiconductor device measurement
SiGe BiCMOS
Silicon germanium
Transistors
UWB (Ultra-Wideband)
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Zusammenfassung:The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital frequency divider. The manufactured chip will be a part of the set of ASIC circuits designed for implementation in the recent UWB radar system architectures.
DOI:10.1109/RADIOELEK.2011.5936454