Test structures for characterising a damascene CMP interconnect process
This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.
Gespeichert in:
Hauptverfasser: | , , , , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 155 |
---|---|
container_issue | |
container_start_page | 151 |
container_title | |
container_volume | |
creator | Peyne, C.M. O'Hara, A. Stevenson, J.T.M. Elliott, J.P. Walton, A.J. Fallon, M. |
description | This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling. |
doi_str_mv | 10.1109/ICMTS.1997.589369 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_589369</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>589369</ieee_id><sourcerecordid>589369</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-ce5fc22e58ff3368dd3e49f73764f4b57a6250847c00c8311961d033081409763</originalsourceid><addsrcrecordid>eNotj81KAzEUhQMiqLUPoKu8wIw3k_-lDFoLLQqO6xIzNxqxmZKkC9_egfZszuKDw3cIuWPQMgb2Yd1vh_eWWatbaSxX9oLcgDbAeSc4uyLLUn5gjpDCargmqwFLpaXmo6_HjIWGKVP_7bLzFXMsMX1RR0e3d8VjQtpv32hMM_JTSugrPeTJYym35DK434LLcy_Ix_PT0L80m9fVun_cNJGBqI1HGXzXoTQhcK7MOHIUNmiulQjiU2qnOglGaA_gDWfMKjbO8mCYAKsVX5D7025ExN0hx73Lf7vTVf4PRPlJXA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Test structures for characterising a damascene CMP interconnect process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</creator><creatorcontrib>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</creatorcontrib><description>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</description><identifier>ISBN: 0780332431</identifier><identifier>ISBN: 9780780332430</identifier><identifier>DOI: 10.1109/ICMTS.1997.589369</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Atomic measurements ; Conducting materials ; Copper ; Dielectric materials ; Dielectric measurements ; Etching ; Surface topography ; Testing ; Textile industry</subject><ispartof>1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.151-155</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/589369$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/589369$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Peyne, C.M.</creatorcontrib><creatorcontrib>O'Hara, A.</creatorcontrib><creatorcontrib>Stevenson, J.T.M.</creatorcontrib><creatorcontrib>Elliott, J.P.</creatorcontrib><creatorcontrib>Walton, A.J.</creatorcontrib><creatorcontrib>Fallon, M.</creatorcontrib><title>Test structures for characterising a damascene CMP interconnect process</title><title>1997 IEEE International Conference on Microelectronic Test Structures Proceedings</title><addtitle>ICMTS</addtitle><description>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</description><subject>Aluminum</subject><subject>Atomic measurements</subject><subject>Conducting materials</subject><subject>Copper</subject><subject>Dielectric materials</subject><subject>Dielectric measurements</subject><subject>Etching</subject><subject>Surface topography</subject><subject>Testing</subject><subject>Textile industry</subject><isbn>0780332431</isbn><isbn>9780780332430</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KAzEUhQMiqLUPoKu8wIw3k_-lDFoLLQqO6xIzNxqxmZKkC9_egfZszuKDw3cIuWPQMgb2Yd1vh_eWWatbaSxX9oLcgDbAeSc4uyLLUn5gjpDCargmqwFLpaXmo6_HjIWGKVP_7bLzFXMsMX1RR0e3d8VjQtpv32hMM_JTSugrPeTJYym35DK434LLcy_Ix_PT0L80m9fVun_cNJGBqI1HGXzXoTQhcK7MOHIUNmiulQjiU2qnOglGaA_gDWfMKjbO8mCYAKsVX5D7025ExN0hx73Lf7vTVf4PRPlJXA</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Peyne, C.M.</creator><creator>O'Hara, A.</creator><creator>Stevenson, J.T.M.</creator><creator>Elliott, J.P.</creator><creator>Walton, A.J.</creator><creator>Fallon, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Test structures for characterising a damascene CMP interconnect process</title><author>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-ce5fc22e58ff3368dd3e49f73764f4b57a6250847c00c8311961d033081409763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Aluminum</topic><topic>Atomic measurements</topic><topic>Conducting materials</topic><topic>Copper</topic><topic>Dielectric materials</topic><topic>Dielectric measurements</topic><topic>Etching</topic><topic>Surface topography</topic><topic>Testing</topic><topic>Textile industry</topic><toplevel>online_resources</toplevel><creatorcontrib>Peyne, C.M.</creatorcontrib><creatorcontrib>O'Hara, A.</creatorcontrib><creatorcontrib>Stevenson, J.T.M.</creatorcontrib><creatorcontrib>Elliott, J.P.</creatorcontrib><creatorcontrib>Walton, A.J.</creatorcontrib><creatorcontrib>Fallon, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Peyne, C.M.</au><au>O'Hara, A.</au><au>Stevenson, J.T.M.</au><au>Elliott, J.P.</au><au>Walton, A.J.</au><au>Fallon, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Test structures for characterising a damascene CMP interconnect process</atitle><btitle>1997 IEEE International Conference on Microelectronic Test Structures Proceedings</btitle><stitle>ICMTS</stitle><date>1997</date><risdate>1997</risdate><spage>151</spage><epage>155</epage><pages>151-155</pages><isbn>0780332431</isbn><isbn>9780780332430</isbn><abstract>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.1997.589369</doi><tpages>5</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISBN: 0780332431 |
ispartof | 1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.151-155 |
issn | |
language | eng |
recordid | cdi_ieee_primary_589369 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Aluminum Atomic measurements Conducting materials Copper Dielectric materials Dielectric measurements Etching Surface topography Testing Textile industry |
title | Test structures for characterising a damascene CMP interconnect process |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T15%3A46%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Test%20structures%20for%20characterising%20a%20damascene%20CMP%20interconnect%20process&rft.btitle=1997%20IEEE%20International%20Conference%20on%20Microelectronic%20Test%20Structures%20Proceedings&rft.au=Peyne,%20C.M.&rft.date=1997&rft.spage=151&rft.epage=155&rft.pages=151-155&rft.isbn=0780332431&rft.isbn_list=9780780332430&rft_id=info:doi/10.1109/ICMTS.1997.589369&rft_dat=%3Cieee_6IE%3E589369%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=589369&rfr_iscdi=true |