Test structures for characterising a damascene CMP interconnect process

This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Peyne, C.M., O'Hara, A., Stevenson, J.T.M., Elliott, J.P., Walton, A.J., Fallon, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 155
container_issue
container_start_page 151
container_title
container_volume
creator Peyne, C.M.
O'Hara, A.
Stevenson, J.T.M.
Elliott, J.P.
Walton, A.J.
Fallon, M.
description This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.
doi_str_mv 10.1109/ICMTS.1997.589369
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_589369</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>589369</ieee_id><sourcerecordid>589369</sourcerecordid><originalsourceid>FETCH-LOGICAL-i104t-ce5fc22e58ff3368dd3e49f73764f4b57a6250847c00c8311961d033081409763</originalsourceid><addsrcrecordid>eNotj81KAzEUhQMiqLUPoKu8wIw3k_-lDFoLLQqO6xIzNxqxmZKkC9_egfZszuKDw3cIuWPQMgb2Yd1vh_eWWatbaSxX9oLcgDbAeSc4uyLLUn5gjpDCargmqwFLpaXmo6_HjIWGKVP_7bLzFXMsMX1RR0e3d8VjQtpv32hMM_JTSugrPeTJYym35DK434LLcy_Ix_PT0L80m9fVun_cNJGBqI1HGXzXoTQhcK7MOHIUNmiulQjiU2qnOglGaA_gDWfMKjbO8mCYAKsVX5D7025ExN0hx73Lf7vTVf4PRPlJXA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Test structures for characterising a damascene CMP interconnect process</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</creator><creatorcontrib>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</creatorcontrib><description>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</description><identifier>ISBN: 0780332431</identifier><identifier>ISBN: 9780780332430</identifier><identifier>DOI: 10.1109/ICMTS.1997.589369</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Atomic measurements ; Conducting materials ; Copper ; Dielectric materials ; Dielectric measurements ; Etching ; Surface topography ; Testing ; Textile industry</subject><ispartof>1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.151-155</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/589369$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/589369$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Peyne, C.M.</creatorcontrib><creatorcontrib>O'Hara, A.</creatorcontrib><creatorcontrib>Stevenson, J.T.M.</creatorcontrib><creatorcontrib>Elliott, J.P.</creatorcontrib><creatorcontrib>Walton, A.J.</creatorcontrib><creatorcontrib>Fallon, M.</creatorcontrib><title>Test structures for characterising a damascene CMP interconnect process</title><title>1997 IEEE International Conference on Microelectronic Test Structures Proceedings</title><addtitle>ICMTS</addtitle><description>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</description><subject>Aluminum</subject><subject>Atomic measurements</subject><subject>Conducting materials</subject><subject>Copper</subject><subject>Dielectric materials</subject><subject>Dielectric measurements</subject><subject>Etching</subject><subject>Surface topography</subject><subject>Testing</subject><subject>Textile industry</subject><isbn>0780332431</isbn><isbn>9780780332430</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81KAzEUhQMiqLUPoKu8wIw3k_-lDFoLLQqO6xIzNxqxmZKkC9_egfZszuKDw3cIuWPQMgb2Yd1vh_eWWatbaSxX9oLcgDbAeSc4uyLLUn5gjpDCargmqwFLpaXmo6_HjIWGKVP_7bLzFXMsMX1RR0e3d8VjQtpv32hMM_JTSugrPeTJYym35DK434LLcy_Ix_PT0L80m9fVun_cNJGBqI1HGXzXoTQhcK7MOHIUNmiulQjiU2qnOglGaA_gDWfMKjbO8mCYAKsVX5D7025ExN0hx73Lf7vTVf4PRPlJXA</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Peyne, C.M.</creator><creator>O'Hara, A.</creator><creator>Stevenson, J.T.M.</creator><creator>Elliott, J.P.</creator><creator>Walton, A.J.</creator><creator>Fallon, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>Test structures for characterising a damascene CMP interconnect process</title><author>Peyne, C.M. ; O'Hara, A. ; Stevenson, J.T.M. ; Elliott, J.P. ; Walton, A.J. ; Fallon, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-ce5fc22e58ff3368dd3e49f73764f4b57a6250847c00c8311961d033081409763</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Aluminum</topic><topic>Atomic measurements</topic><topic>Conducting materials</topic><topic>Copper</topic><topic>Dielectric materials</topic><topic>Dielectric measurements</topic><topic>Etching</topic><topic>Surface topography</topic><topic>Testing</topic><topic>Textile industry</topic><toplevel>online_resources</toplevel><creatorcontrib>Peyne, C.M.</creatorcontrib><creatorcontrib>O'Hara, A.</creatorcontrib><creatorcontrib>Stevenson, J.T.M.</creatorcontrib><creatorcontrib>Elliott, J.P.</creatorcontrib><creatorcontrib>Walton, A.J.</creatorcontrib><creatorcontrib>Fallon, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Peyne, C.M.</au><au>O'Hara, A.</au><au>Stevenson, J.T.M.</au><au>Elliott, J.P.</au><au>Walton, A.J.</au><au>Fallon, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Test structures for characterising a damascene CMP interconnect process</atitle><btitle>1997 IEEE International Conference on Microelectronic Test Structures Proceedings</btitle><stitle>ICMTS</stitle><date>1997</date><risdate>1997</risdate><spage>151</spage><epage>155</epage><pages>151-155</pages><isbn>0780332431</isbn><isbn>9780780332430</isbn><abstract>This paper presents some test structures that can be used to help characterize interconnect fabricated using a CMP damascene process. Electrical measurements of the test structures are compared with those obtained using an AFM and surface profiling.</abstract><pub>IEEE</pub><doi>10.1109/ICMTS.1997.589369</doi><tpages>5</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 0780332431
ispartof 1997 IEEE International Conference on Microelectronic Test Structures Proceedings, 1997, p.151-155
issn
language eng
recordid cdi_ieee_primary_589369
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Aluminum
Atomic measurements
Conducting materials
Copper
Dielectric materials
Dielectric measurements
Etching
Surface topography
Testing
Textile industry
title Test structures for characterising a damascene CMP interconnect process
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T15%3A46%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Test%20structures%20for%20characterising%20a%20damascene%20CMP%20interconnect%20process&rft.btitle=1997%20IEEE%20International%20Conference%20on%20Microelectronic%20Test%20Structures%20Proceedings&rft.au=Peyne,%20C.M.&rft.date=1997&rft.spage=151&rft.epage=155&rft.pages=151-155&rft.isbn=0780332431&rft.isbn_list=9780780332430&rft_id=info:doi/10.1109/ICMTS.1997.589369&rft_dat=%3Cieee_6IE%3E589369%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=589369&rfr_iscdi=true