Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs

Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs

600V-class superjunction (SJ) MOSFETs fabricated by trench-filling process are investigated by analytical and numerical solutions with experimental results. The careful consideration on the effects of trench taper and p-column profile is given for accurate charge control. The breakdown voltage (V b...

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Bibliographische Detailangaben
Hauptverfasser: Tamaki, T., Nakazawa, Y., Kanai, H., Abiko, Y., Ikegami, Y., Ishikawa, M., Wakimoto, E., Yasuda, T., Eguchi, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Doping profiles
Electric fields
Epitaxial growth
Junctions
MOSFETs
Silicon
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Beschreibung
Zusammenfassung:600V-class superjunction (SJ) MOSFETs fabricated by trench-filling process are investigated by analytical and numerical solutions with experimental results. The careful consideration on the effects of trench taper and p-column profile is given for accurate charge control. The breakdown voltage (V b ), specific on-resistance (R onAa ), and gate-to-drain charge (Q gd ) of 736 V, 16.4 mΩ-cm 2 , and 6 nC, respectively, have been achieved for the fabricated SJ-MOSFET.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2011.5890852